PART |
Description |
Maker |
KM41464A KM41464A-12 KM41464A-15 KM41464AJ KM41464 |
64K x 4-Bit DRAM 64K X 4 BIT DYNAMIC RAM WITH PAGE MODE 64K的4位动态内存页面模
|
Samsung Electronics Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
|
27C512TRPFB-12 27C512TRPFB-15 27C512TRPFS-15 27C51 |
512K (64K x 8-Bit) OTP EPROM 64K X 8 OTPROM, 150 ns, DIP32 512K (64K x 8-Bit) OTP EPROM 64K X 8 OTPROM, 120 ns, DIP32 512K (64K x 8-Bit) OTP EPROM 64K X 8 OTPROM, 200 ns, DIP32 512K (64K x 8-Bit) OTP EPROM 64K X 8 OTPROM, 120 ns, DFP32
|
Maxwell Technologies, Inc
|
IDT7198L IDT7198L20DB IDT7198L20EB IDT7198L20LB ID |
CMOS static RAM 64K (16K x 4-bit) CMOS STATIC RAMs 64K (16K x 4-BIT) Added Chip Select and Output Controls
|
IDT[Integrated Device Technology]
|
KM616FR1000 |
64K x16 Bit Super Low Power and Low Voltage Full CMOS Static RAM(64K x 16位超低功耗低电压CMOS 静态RAM) 64K的x16位超低功耗和低电压的CMOS全静态RAM4K的16位超低功耗低电压的CMOS静态RAM)的
|
Samsung Semiconductor Co., Ltd.
|
AT28C64BNBSP AT28C64B-15PI AT28C64B-20PI AT28C64B- |
64K 8K x 8 Battery-Voltage CMOS E2PROM 8K X 8 EEPROM 5V, 150 ns, PDSO28 Octal Edge-Triggered D-Type Flip-Flops With 3-State Outputs 20-VQFN -40 to 85 8K X 8 EEPROM 5V, 150 ns, PDSO28 64K 8K x 8 CMOS E2PROM 8-Bit Shift Registers With Output Registers 16-SSOP -40 to 85 64K EEPROM with 64-Byte Page & Software Data Protection 64K (8K x 8) CMOS E2PROM with Page Write and Software Data Protection From old datasheet system 64K (8K x 8) Parallel EEPROM with Page Write and Software Data Protection
|
Atmel, Corp. Atmel Corp. ATMEL[ATMEL Corporation]
|
MCM69F618CTQ12 MCM69F618CTQ12R MCM69F618CTQ10 MCM6 |
64K x 18 Bit Flow-Through BurstRAM Synchronous Fast Static RAM 64K X 18 CACHE SRAM, 12 ns, PQFP100 64K x 18 Bit Flow-Through BurstRAM Synchronous Fast Static RAM 64K X 18 CACHE SRAM, 9 ns, PQFP100
|
MOTOROLA[Motorola, Inc] Motorola Mobility Holdings, Inc. MOTOROLA INC
|
GS820E32T-66 GS820E32T-100 GS820E32Q-150 GS820E32Q |
138MHz 9.7ns 64K x 32 2M synchronous burst SRAM 150MHz 9ns 64K x 32 2M synchronous burst SRAM 64K X 32 CACHE SRAM, 11 ns, PQFP100 64K X 32 CACHE SRAM, 12 ns, PQFP100 64K X 32 CACHE SRAM, 10 ns, PQFP100 5.6UF/100VDC METAL POLY CAP 200万同步突发静态存储器 2M Synchronous Burst SRAM 200万同步突发静态存储器 Socket Adapter; For Use With:ATMEGA168-TQFP32, ATMEGA48-TQFP32, ATMEGA88-TQFP32, ATMEGA8L-TQFP32, ATMEGA8L(FAST)-TQFP32; Pitch Spacing:.8mm 64K x 32 / 2M Synchronous Burst SRAM 117MHz 11ns 64K x 32 2M synchronous burst SRAM 66MHz 18ns 64K x 32 2M synchronous burst SRAM
|
GSI Technology Electronic Theatre Controls, Inc. List of Unclassifed Manufacturers
|
AT49F1024A AT49F1024A-45VL AT49F1024A-45VC |
1M bit, 64K x 16, 5-Volt Read and 5-Volt Write Flash 1 - MEGABIT ( 64K X 16 ) 5 - VOLTS ONLY FLASH MEMORY
|
ATMEL[ATMEL Corporation]
|
CY7C1332 CY7C1331 7C1331 |
64K x 18 Synchronous Cache 3.3V RAM(3.3V 64K x 18 同步高速缓冲存储器 RAM) 64K的18同步高速缓.3V的内存电压(3.3V 64K的18同步高速缓冲存储器的RAM From old datasheet system 64K x 18 SynchronousCache 3.3V RAM
|
Cypress Semiconductor Corp.
|
CAT28C64A CAT28C64AI-20 28C64A-20 CAT28C64A-15 CAT |
64K 8K x 8 Battery-Voltage CMOS E2PROM 64KK的8电池电压的CMOS E2PROM 128Kx8 EEPROM 64K - BIT CMOS E2PROM
|
Atmel, Corp. CATALYST[Catalyst Semiconductor]
|
IS25C64A-3ZLA1 IS25C32A IS25C32A_07 IS25C32A-2GI I |
32K-BIT/64K-BIT SPI SERIAL ELECTRICALLY ERASABLE PROM
|
ISSI[Integrated Silicon Solution, Inc]
|